PD - 94164A HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRL5Y7413CM 30V, N-CHANNEL Product Summary Part Number IRL5Y7413CM BVDSS 30V RDS(on) ID 0.025Ω 18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an ex
IRL5Y7413CM Features
* n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Dr
IRL5Y7413CM-InternationalRectifier.pdf
Datasheet Details
IRL5Y7413CM
International Rectifier
101.16 KB
N-channel power mosfet.
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