IRL8113PbF Datasheet - International Rectifier

IRL8113PbF Power MOSFET

PD - 95582 IRL8113PbF IRL8113SPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free VDSS 30V IRL8113LPbF HEXFET® Power MOSFET RDS(on) max Qg (Typ.) 6.0m: 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRL8113 D2Pak IRL8113S Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-So.

IRL8113PbF Features

* ified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen fr

IRL8113PbF-InternationalRectifier.pdf