IRL8114PbF Datasheet - International Rectifier

IRL8114PbF Power MOSFET

Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Low RDS(on) at 4.5V VGS  Low Gate Charge  Fully Characterized Capacitance and Avalanche SOA  Lead-Free IRL8114PbF HEXFET® Power MOSFET D VDSS 30V RDS(on) typ. 3.5m G max 4.5m ID (Silicon Limited) 120A IS D (Package Limited) 90A Base part number IRL8114PbF Package Type TO-220 GDS TO-220AB IRL8114PbF G Gate Standard Pack Form Quantity Tube 50 D D.

IRL8114PbF Features

* rating; pulse width limited by max. junction temperature.  Limited by TJMAX, starting TJ = 25°C, L = 0.39mH, RG = 50, IAS = 32A, VGS =10V.

* Pulse width  400µs; duty cycle  2%.  R is measured at TJ approximately 90°C.  Pulse drain current is limited at 360A by source bond technology. IR

IRL8114PbF Datasheet (408.36 KB)