IRL8113S Datasheet - International Rectifier

IRL8113S Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET® Power MOSFET VDSS RDS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRL8113 D2Pak IRL8113S Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous .

IRL8113S Features

* the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the

IRL8113S Datasheet (301.18 KB)