IRLL024N Datasheet - International Rectifier

HEXFET Power MOSFET

IRLL024N Features

* 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (90

IRLL024N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRLL024N Datasheet (114.51 KB)

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IRLL024N

Manufacturer:

International Rectifier

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114.51 KB

Description:

Hexfet power mosfet.
PD - 91895 IRLL024N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Swi.

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IRLL024N HEXFET Power MOSFET International Rectifier

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IRLL024N Features

IRLL024N General Description

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