IRLL024N HEXFET Power MOSFET

International Rectifier

Description

PD - 91895 IRLL024N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Swi.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRLL024N
Manufacturer: International Rectifier
File Size: 114.51 KB
Datasheet: IRLL024N_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (90

Applications

* The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for h

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IRLL024N HEXFET Power MOSFET International Rectifier

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