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IRLL024ZPbF Power MOSFET

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Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Applications

* G PD - 95990A IRLL024ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 60mΩ S ID = 5.0A SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C iContinuous Drain Current, VGS @ 10V (Silicon Limited) iContinuous Drain Current, VGS @ 10V ™Pulsed D

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