IRLL014N Datasheet - International Rectifier

IRLL014N, HEXFET Power MOSFET

PD- 91499B IRLL014N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Swi.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRLL014N

Manufacturer:

International Rectifier

File Size:

158.50 KB

Description:

HEXFET Power MOSFET

Features

* TR 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) 7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O

Applications

* The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for h

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