IRLL014NPBF

POWER MOSFET

International Rectifier

IRLL014NPBF General Description

l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device de.

IRLL014NPBF Datasheet (263.77 KB)

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IRLL014NPBF

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International Rectifier

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263.77 KB

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Power mosfet.
PD- 95154 IRLL014NPbF Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche R.

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IRLL014NPBF POWER MOSFET International Rectifier

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IRLL014NPBF General Description

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