IRLL2705PBF

POWER MOSFET

International Rectifier

IRLL2705PBF General Description

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.04Ω G ID = 3.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi.

IRLL2705PBF Datasheet (283.22 KB)

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IRLL2705PBF

Manufacturer:

International Rectifier

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283.22 KB

Description:

Power mosfet.
PD- 95338 IRLL2705PbF Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technol.

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IRLL2705PBF POWER MOSFET International Rectifier

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IRLL2705PBF General Description

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