IRLM110A - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRLM110A
Manufacturer	International Rectifier
File Size	227.26 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM110A_InternationalRectifier.pdf

ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V ν Lower RDS(ON) : 0.336 Ω (Typ. ) IRLM110A BVDSS = 100 V RDS(on) = 0.44 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

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Published: Oct 19, 2005 |