IRLM110A - HEXFET Power MOSFET
IRLM110A Features
* ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ν Lower RDS(ON) : 0.336 Ω (Typ.) IRLM110A BVDSS = 100 V RDS(on) = 0.44 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate
