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IRLM120A HEXFET Power MOSFET

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Description

Advanced Power MOSFET .

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Datasheet Specifications

Part number
IRLM120A
Manufacturer
International Rectifier
File Size
229.86 KB
Datasheet
IRLM120A_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ. ) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate

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International Rectifier IRLM120A-like datasheet