IRLM120A - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRLM120A
Manufacturer	International Rectifier
File Size	229.86 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM120A_InternationalRectifier.pdf

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ. ) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

📁 IRLM120A Similar Datasheet

Other Datasheets by International Rectifier

Published: Oct 19, 2005 |