IRLM120A - HEXFET Power MOSFET
IRLM120A Features
* n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate
