IRLM210A - HEXFET Power MOSFET
IRLM210A Features
* n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V n Lower RDS(ON) : 1.185 Ω (Typ.) IRLM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gat
