IRLM210A - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRLM210A
Manufacturer	International Rectifier
File Size	270.10 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM210A_InternationalRectifier.pdf

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V n Lower RDS(ON) : 1.185 Ω (Typ. ) IRLM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curre.

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Published: Oct 19, 2005 |