IRLM220A - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRLM220A
Manufacturer	International Rectifier
File Size	243.69 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM220A_InternationalRectifier.pdf

ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ. ) IRLM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25°C) Continuous Drain Curre.

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Published: Oct 19, 2005 |