IRLM220A - HEXFET Power MOSFET
IRLM220A Features
* ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gat
