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GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR

GB10B60KD Description

www.DataSheet4U.com PD - 94382D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = .

GB10B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

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Datasheet Details

Part number
GB10B60KD
Manufacturer
International Rectifier
File Size
365.90 KB
Datasheet
GB10B60KD_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier GB10B60KD-like datasheet