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IRF3710LPBF, IRF3710SPBF Power MOSFET

IRF3710LPBF Description

IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

IRF3710LPBF Features

* . T for P-Channel Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ]
* D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VD

IRF3710LPBF Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio

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This datasheet PDF includes multiple part numbers: IRF3710LPBF, IRF3710SPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF3710LPBF, IRF3710SPBF
Manufacturer
International Rectifier
File Size
315.12 KB
Datasheet
IRF3710SPBF-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF3710LPBF, IRF3710SPBF.
Please refer to the document for exact specifications by model.

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Power MOSFET International Rectifier
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