IRF6810STRPBF - Power MOSFET
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in
PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET RoHS Compliant and Halogen Free Typical values (unless otherwise specified) Low Profile (<0.7 mm) Dual Sided Cooling Compatible VDSS VGS RDS(on) RDS(on) Ultra Low Package Inductance 25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for Control FET Application 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.
IRF6810STRPBF Features
* Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fi
