Description
PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET RoHS Compliant and Halogen Free Typical values (unless ot.
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.
Features
* Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
Fig 11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
Fi
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t