IRF6810STR1PBF Datasheet, Mosfet, International Rectifier

IRF6810STR1PBF Features

• Mosfet istics 1000 Fig 5. Typical Output Characteristics 1.6 ID = 16A V GS = 10V V GS = 4.5V ID, Drain-to-Source Current (A) 100 Typical RDS(on) (Normalized) T J = 150°C T J = 25°C T J =

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IRF6810STR1PBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve impr

IRF6810STR1PBF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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