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IRF6810STRPBF Power MOSFET

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Description

PD -96393 IRF6810STRPbF IRF6810STR1PbF l l l l l l l l l l DirectFET plus Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values (unless ot.
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance.

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Features

* Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fi

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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