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IRF6802SDPBF

Power MOSFET

IRF6802SDPBF Features

* ) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40

IRF6802SDPBF General Description

The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in.

IRF6802SDPBF Datasheet (262.49 KB)

Preview of IRF6802SDPBF PDF

Datasheet Details

Part number:

IRF6802SDPBF

Manufacturer:

International Rectifier

File Size:

262.49 KB

Description:

Power mosfet.
IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low.

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IRF6802SDPBF Power MOSFET International Rectifier

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