IRF6802SDPBF Power MOSFET

International Rectifier

Description

IRF6802SDPbF IRF6802SDTRPbF Typical values (unless otherwise specified) RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low.
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance.

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Datasheet Specifications

Part number: IRF6802SDPBF
Manufacturer: International Rectifier
File Size: 262.49 KB
Datasheet: IRF6802SDPBF_InternationalRectifier.pdf
Description: Power MOSFET

Features

* ) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best

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IRF6802SDPBF Power MOSFET International Rectifier

International Rectifier IRF6802SDPBF-like datasheet