IRF6802SDPBF Datasheet, Mosfet, International Rectifier

IRF6802SDPBF Features

• Mosfet 1 60μs PULSE WIDTH Tj = 150°C 10 100 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 VDS = 15V 60μs PULSE WIDTH Typi

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IRF6802SDPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve impr

IRF6802SDPBF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF6802SDPBF

International Rectifier

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