IRF6802SDPBF - Power MOSFET

International Rectifier

IRF6802SDPBF Datasheet Preview — Preview of IRF6802SDPBF PDF

Datasheet Details

Part number	IRF6802SDPBF
Manufacturer	International Rectifier ↗
File Size	262.49 KB
Description	Power MOSFET
Datasheet	IRF6802SDPBF_InternationalRectifier.pdf

IRF6802SDPBF Product details

Description

The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

) 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = 35μA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Puls.

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Published: Oct 23, 2013 |