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IRF6811SPBF Power MOSFET

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Description

PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Op.
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance.

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Features

* e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe O

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best

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