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IRF6811SPBF

Power MOSFET

IRF6811SPBF Features

* e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe O

IRF6811SPBF General Description

The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in.

IRF6811SPBF Datasheet (276.92 KB)

Preview of IRF6811SPBF PDF

Datasheet Details

Part number:

IRF6811SPBF

Manufacturer:

International Rectifier

File Size:

276.92 KB

Description:

Power mosfet.
PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Op.

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IRF6811SPBF Power MOSFET International Rectifier

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