IRF6811SPBF Datasheet (International Rectifier)

IRF6811SPBF, Power MOSFET

The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET® package is compatible with existing layout geometries used in

PD-97634 l l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET Typical values (unless otherwise specified) DirectFET®plus Power MOSFET VGS RDS(on) Qgs2 1.4nC IRF6811SPbF IRF6811STRPbF RDS(on) Q

IRF6811SPBF Features

* e-to-Drain Voltage (V) 0.1 Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig11. Maximum Safe O