IRF6811SPBF Datasheet, Mosfet, International Rectifier

IRF6811SPBF Features

• Mosfet 25°C ≤60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1

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IRF6811SPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve impr

IRF6811SPBF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF6811SPBF

International Rectifier

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