IRF6892STR1PBF, IRF6892STRPBF Datasheet - International Rectifier

IRF6892STR1PBF - Power MOSFET

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometri.

IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET®plus MOSFET with Schottky Diode Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.0nC RDS(on) Qgs2 2.3nC RD.

IRF6892STR1PBF Features

* °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temp

IRF6892STRPBF-InternationalRectifier.pdf