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IRF6892STR1PBF

Power MOSFET

IRF6892STR1PBF Features

* °C Single Pulse 0.01 0.01 0.1 1 DC 10 100 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 140 120 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temp

IRF6892STR1PBF General Description

The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometri.

IRF6892STR1PBF Datasheet (249.71 KB)

Preview of IRF6892STR1PBF PDF

Datasheet Details

Part number:

IRF6892STR1PBF

Manufacturer:

International Rectifier

File Size:

249.71 KB

Description:

Power mosfet.
IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ul.

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IRF6892STR1PBF Power MOSFET International Rectifier

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