IRF6892STR1PBF Description
IRF6892STRPbF IRF6892STR1PbF l l l l l l l l l PD - 97770 RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ul.
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.
IRF6892STR1PBF Features
* °C Single Pulse 0.01 0.01 0.1 1
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
140 120
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temp
IRF6892STR1PBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma
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