IRF6898MPBF Power MOSFET

International Rectifier

Description

HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0..
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

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Datasheet Specifications

Part number: IRF6898MPBF
Manufacturer: International Rectifier
File Size: 260.67 KB
Datasheet: IRF6898MPBF-InternationalRectifier.pdf
Description: Power MOSFET

Features

* C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 10 T J = 150°C T J = 25°C T J = -40°C VGS = 0V 1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 225 200 175 ID, Drain Current (A) Fig 11. Maximum Sa

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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IRF6898MPBF Power MOSFET International Rectifier

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