IRF6893MPbF Datasheet - International Rectifier

IRF6893MPbF MOSFET

The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometrie.

PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Low Package Inductance l Optimized for High Frequency Switching VDSS VGS RDS(on) RDS(on) 25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 25nC 8.5nC 2.5nC 36nC 29nC 1.6V l Ideal for CPU Co.

IRF6893MPbF Features

* 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1600 1400 1200 1000 Typical VGS(th) Gate threshold Voltage (V) 2.3 2.2 2.1 2.0 1.9 ID = 10mA 1.8 1.7 1.6 1.5 1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Typical Thresho

IRF6893MPbF Datasheet (225.39 KB)