IRF6894MTRPBF

Power MOSFET

International Rectifier

IRF6894MTRPBF Features

* .7 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 160 140 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temper

IRF6894MTRPBF General Description

The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometri.

IRF6894MTRPBF Datasheet (270.73 KB)

IRF6894MTRPBF Datasheet Preview — Preview of IRF6894MTRPBF PDF

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IRF6894MTRPBF

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International Rectifier

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270.73 KB

Description:

Power mosfet.
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) R.

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IRF6894MTRPBF Power MOSFET International Rectifier

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IRF6894MTRPBF Features

IRF6894MTRPBF General Description

Datasheet Details

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