Description
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) R.
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.
Features
* .7 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180 160 140
ID, Drain Current (A)
Fig 11. Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temper
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma