IRF6894MPBF Datasheet - International Rectifier

IRF6894MPBF, Power MOSFET

l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) R.
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.

IRF6894MPBF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6894MPBF

Manufacturer:

International Rectifier

File Size:

270.73 KB

Description:

Power MOSFET

Features

* .7 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 160 140 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temper

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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IRF6894MPBF Power MOSFET International Rectifier

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