IRF6894MPBF Datasheet - International Rectifier

IRF6894MPBF Power MOSFET

The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometri.

l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conductio.

IRF6894MPBF Features

* .7 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 180 160 140 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temper

IRF6894MPBF-InternationalRectifier.pdf