Description
PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET®plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (.
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* 0
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1600 1400 1200 1000
Typical VGS(th) Gate threshold Voltage (V)
2.3
2.2
2.1
2.0
1.9 ID = 10mA
1.8
1.7
1.6
1.5
1.4 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C )
Fig 13. Typical Thresho
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma