IRF6898MTRPBF Description
HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0..
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state re.
IRF6898MTRPBF Features
* C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100
10
T J = 150°C T J = 25°C T J = -40°C VGS = 0V
1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
225 200 175
ID, Drain Current (A)
Fig 11. Maximum Sa
IRF6898MTRPBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma
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