IRF6898MTRPBF - Power MOSFET
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries us
HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync.
FET socket of Sync.
Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested IRF6898MPbF IRF6898MTRPbF RDS(on) RDS(on
IRF6898MTRPBF Features
* C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 10 T J = 150°C T J = 25°C T J = -40°C VGS = 0V 1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 225 200 175 ID, Drain Current (A) Fig 11. Maximum Sa
