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IRF7807VTRPBF-1 - Power MOSFET

IRF7807VTRPBF-1 Description

VDS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 25 mΩ 9.5 nC 8.3 A .

IRF7807VTRPBF-1 Features

* Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7807VTRPbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 A 8D 7D 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environme

IRF7807VTRPBF-1 Applications

* This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. Efficiency (%) Efficiency (%) 93 92 91 90

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