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IRF9540NLPBF - POWER MOSFET

IRF9540NLPBF Description

www.DataSheet4U.com PD - 96030 HEXFET® Power MOSFET l l l l l l l l IRF9540NSPbF IRF9540NLPbF VDSS = -100V RDS(on) = 117mΩ Advanced Process Techno.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

IRF9540NLPBF Applications

* D G D S G D S D2Pak IRF9540NSPbF G D TO-262 IRF9540NLPbF S Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Gate D

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POWER MOSFET International Rectifier
International Rectifier IRF9540NLPBF-like datasheet