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IRF9510S - Power MOSFET

IRF9510S Description

www.vishay.com IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

IRF9510S Features

* Surface-mount
* Available in tape and reel
* Dynamic dV/dt rating Available
* Repetitive avalanche rated
* P-channel
* 175 °C operating temperature Available
* Fast switching
* Material categorization: for definitions of comp

IRF9510S Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHF9510STRL-GE3 a IRF9510STRLPbF a - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Co

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Power MOSFET Vishay
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