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IRF9530 Power MOSFET

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Description

www.vishay.com IRF9530 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qg.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* P-channel
* 175 °C operating temperature Available
* Fast switching
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF9530PbF IRF9530PbF-BE3 ABSOLUTE MAX

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