Datasheet4U Logo Datasheet4U.com

IRF9956 Power MOSFET

IRF9956 Description

PD - 91559B IRF9956 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF9956 Applications

* HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 30V RDS(on) = 0.10Ω Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and

📥 Download Datasheet

Preview of IRF9956 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9140 - P-Channel Power MOSFET (Seme LAB)
  • IRF9141 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)
  • IRF9142 - (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF9956-like datasheet