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IRG4BC40S - HEXFET Power MOSFET

IRG4BC40S Description

PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR .

IRG4BC40S Features

* Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
* Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E

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International Rectifier IRG4BC40S-like datasheet