of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-s
✔ HGTG30N60B3D Application
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor contro
HGTG30N60B3, Fairchild Semiconductor
HGTG30N60B3
Data Sheet August 2003
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching device bining the be.
HGTG30N60B3, Intersil Corporation
HGTG30N60B3
Data Sheet January 2000 File Number 4444.2
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching dev.
HGTG30N60B3, ON Semiconductor
IGBT - NPT
600 V
HGTG30N60B3
Description The HGTG30N60B3 bines the best features of high input
impedance of a MOSFET and the low on−state conductio.
HGTG30N60B3D, Fairchild Semiconductor
HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet December 2001
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and H.
HGTG30N60B3D, ON Semiconductor
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
60 A, 600 V
HGTG30N60B3D
The HGTG30N60B3D is a MOS gated high voltage switching device co.
HGTG30N60A4, Fairchild Semiconductor
HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device .
HGTG30N60A4, Intersil Corporation
HGTG30N60A4
Data Sheet January 2000 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device co.