Datasheet Specifications
- Part number
- HGTG30N60B3D
- Manufacturer
- Intersil Corporation
- File Size
- 109.09 KB
- Datasheet
- HGTG30N60B3D_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGTG30N60B3D Data Sheet January 2000 File Number 4446.2 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used inHGTG30N60B3D Distributors
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