HGTG30N60B3D Datasheet - Intersil Corporation

HGTG30N60B3D_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTG30N60B3D

Manufacturer:

Intersil Corporation

File Size:

109.09 KB

Description:

N-channel igbt.

HGTG30N60B3D, N-Channel IGBT

HGTG30N60B3D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in

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HGTG30N60B3D N-Channel IGBT Intersil Corporation