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HS9-65647RH-Q

Radiation Hardened 8K x 8 SOS CMOS Static RAM

HS9-65647RH-Q Features

* 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day

* Latch-up Free

* LET Threshold >250 MEV/mg/cm2

* Low Standby Supply Current 10mA (Max)

* Low Operatin

HS9-65647RH-Q General Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high in.

HS9-65647RH-Q Datasheet (110.84 KB)

Preview of HS9-65647RH-Q PDF

Datasheet Details

Part number:

HS9-65647RH-Q

Manufacturer:

Intersil Corporation

File Size:

110.84 KB

Description:

Radiation hardened 8k x 8 sos cmos static ram.

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HS9-65647RH-Q Radiation Hardened SOS CMOS Static RAM Intersil Corporation

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