HUF76129S3S Datasheet (Intersil Corporation)

HUF76129S3S, N-Channel MOSFET

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge

HUF76129S3S Features

* Logic Level Gate Drive

* 56A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.016Ω

* Temperature Compensating PSPICE® Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr