HUF76129S3S Datasheet - Intersil Corporation

HUF76129S3S N-Channel MOSFET

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

HUF76129S3S Features

* Logic Level Gate Drive

* 56A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.016Ω

* Temperature Compensating PSPICE® Model

* Temperature Compensating SABER© Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr

HUF76129S3S_IntersilCorporation.pdf

HUF76129S3S Datasheet Preview — Preview of HUF76129S3S PDF

Datasheet Details

Part number:

HUF76129S3S

Manufacturer:

Intersil Corporation

File Size:

108.87 KB

Description:

N-channel mosfet.

HUF76129S3S Distributor

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HUF76129S3S HUF76129S3S N-Channel MOSFET Intersil Corporation