HUF76107D3S Datasheet (Intersil Corporation)

HUF76107D3S, N-Channel MOSFET

HUF76107D3, HUF76107D3S Data Sheet July 1999 File Number 4701.1 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process.

This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.

HUF76107D3S Features

* Logic Level Gate Drive

* 20A, 30V

* Ultra Low On-Resistance, rDS(ON) = 0.052Ω

* Temperature Compensating PSPICE® Model

* Thermal Impedance SPICE Model

* Thermal Impedance SABER Model

* Peak Curr