HUF76105SK8 - N-Channel MOSFET
HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for
HUF76105SK8 Features
* Logic Level Gate Drive
* 5.5A, 30V
* Ultra Low On-Resistance, rDS(ON) = 0.050Ω
* Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models
