IRFF9130 Datasheet - Intersil Corporation

IRFF9130 P-Channel Power MOSFET

IRFF9130 Data Sheet February 1999 File Number 2216.3 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

IRFF9130 Features

* -6.5A, -100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFF91

IRFF9130 Datasheet (327.74 KB)

IRFF9130 Datasheet Preview — Preview of IRFF9130 PDF

Datasheet Details

Part number:

IRFF9130

Manufacturer:

Intersil Corporation

File Size:

327.74 KB

Description:

P-channel power mosfet.

📁 Related Datasheet

IRFF9130 Repetitive Avalanche and dv/dt Rated Power MOSFET (International Rectifier)

IRFF9130 P-CHANNEL POWER MOSFET (TT)

IRFF9110 HEXFET TRANSISTORS THRU-HOLE (TO-205AF) (International Rectifier)

IRFF9111 (IRFF9110 - IRFF9113) P-Channel Power MOSFET (International Rectifier)

IRFF9112 (IRFF9110 - IRFF9113) P-Channel Power MOSFET (International Rectifier)

IRFF9113 (IRFF9110 - IRFF9113) P-Channel Power MOSFET (International Rectifier)

IRFF9120 P-Channel Power MOSFET (Intersil Corporation)

IRFF9220 P-Channel Power MOSFET (Intersil Corporation)

TAGS

IRFF9130 P-Channel Power MOSFET Intersil Corporation

IRFF9130 Distributor