IRFF9230 Datasheet - Intersil Corporation

IRFF9230 P-Channel Power MOSFET

IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar swi.

IRFF9230 Features

* -4.0A, -200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFF92

IRFF9230 Datasheet (328.02 KB)

IRFF9230 Datasheet Preview — Preview of IRFF9230 PDF

Datasheet Details

Part number:

IRFF9230

Manufacturer:

Intersil Corporation

File Size:

328.02 KB

Description:

P-channel power mosfet.

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TAGS

IRFF9230 P-Channel Power MOSFET Intersil Corporation

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