RFL1P10 Datasheet (Intersil Corporation)

RFL1P10, P-Channel Power MOSFET

These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These ty

RFL1P10 Features

* 1A, -80V and -100V

* rDS(ON) = 3.65Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE