RFL1P10 P-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL1P08, RFL1P10 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs .
These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFL1P10
Manufacturer: Intersil Corporation
File Size: 42.45 KB
Datasheet: RFL1P10_IntersilCorporation.pdf
Description: P-Channel Power MOSFET

Features

* 1A, -80V and -100V
* rDS(ON) = 3.65Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9400. July 1998 Fea

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RFL1P10 P-Channel Power MOSFET Intersil Corporation

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