RFP6N50 N-Channel MOSFET

Intersil Corporation

Description

Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for applications such as switching regulators, sw.

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Datasheet Specifications

Part number: RFP6N50
Manufacturer: Intersil Corporation
File Size: 32.83 KB
Datasheet: RFP6N50_IntersilCorporation.pdf
Description: N-Channel MOSFET

Features

* 6A, 450V and 500V
* rDS(ON) = 1.250Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedence
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Sold

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. September 199

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RFP6N50 N-Channel MOSFET Intersil Corporation

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