RFP6N50 Datasheet (Intersil Corporation)

RFP6N50, N-Channel MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow

RFP6N50 Features

* 6A, 450V and 500V

* rDS(ON) = 1.250Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedence

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Sold