ISL70040SEH Datasheet - Intersil

ISL70040SEH Radiation Hardened Low-Side GaN FET Driver

DATASHEET ISL70040SEH, ISL73040SEH Radiation Hardened Low-Side GaN FET Driver The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The drivers operate with a supply voltage from 4.5V to 13.2V and have both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4..

ISL70040SEH Features

* an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14.7V regardless of the VDD voltage. This allows

ISL70040SEH Datasheet (1.08 MB)