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FSL23A0D N-Channel Power MOSFET

FSL23A0D Description

FSL23A0D, FSL23A0R Data Sheet June 1999 File Number 4476.2 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discr.

FSL23A0D Features

* 6A, 200V, rDS(ON) = 0.350Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat

FSL23A0D Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
FSL23A0D
Manufacturer
Intersil Corporation
File Size
72.37 KB
Datasheet
FSL23A0D_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation FSL23A0D-like datasheet