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2SJ355 Datasheet - JINGAO

2SJ355 - P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

2SJ355 Features

* -30V,-5A, RDS(ON) =40mΩ @VGS =-10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Para

2SJ355-JINGAO.pdf

Preview of 2SJ355 PDF
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Datasheet Details

Part number:

2SJ355

Manufacturer:

JINGAO

File Size:

0.96 MB

Description:

P-channel mosfet.

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