2SJ355 - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
2SJ355 Features
* -30V,-5A, RDS(ON) =40mΩ @VGS =-10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* Load Switch
* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Para
