H13003D Datasheet - Jingdao Electronic

H13003D, Bipolar Junction Transistor

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13003D Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Fluorescen.

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Datasheet Details

Part number:

H13003D

Manufacturer:

Jingdao Electronic

File Size:

115.05 KB

Description:

Bipolar Junction Transistor

Features

* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VA

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H13003D Bipolar Junction Transistor Jingdao Electronic

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