H13003DL Datasheet - Jingdao

H13003DL Bipolar Junction Transistor

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. H13003DL NPN RoHS 1． 110V 、 2． 3． TO-126D 4． 4.1 ，Tamb= 25℃ - - - Ta=25℃ Tc=25℃ 4.2 ，Tamb= 25℃ - - - - - - - - ＊: tp≤300μs,δ≤2% 1 VD 1 (B) 2 (C) 3 (E) VCBO VCEO VEBO IC Ptot Tj Tstg 400 200 9 4.0 1.25 27 150 -55～150 V V V A W ℃ ℃ BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE sat VBE sat tr tf ts fT IC=1mA，IE=0 IC=1mA，IB=0 IE=1mA，IC=0 VCB=400V, IE=0 V.

H13003DL-Jingdao.pdf