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H13005D Bipolar Junction Transistor

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Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.H13005D Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1.APPLICATION Fluorescen.

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Datasheet Specifications

Part number
H13005D
Manufacturer
Jingdao
File Size
116.06 KB
Datasheet
H13005D-Jingdao.pdf
Description
Bipolar Junction Transistor

Features

* High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD SOT-82 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VAL

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