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13007DL Bipolar Junction Transistor

13007DL Description

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd.13007DL Bipolar Junction Transistor *Si NPN *RoHS COMPLIANT 1．APPLICATION Mainly us.

13007DL Features

* Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base

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Datasheet Details

Part number
13007DL
Manufacturer
Jingdao
File Size
115.78 KB
Datasheet
13007DL-Jingdao.pdf
Description
Bipolar Junction Transistor

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Bipolar Junction Transistor Jingdao
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