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13007DL - Bipolar Junction Transistor

Datasheet Summary

Features

  • Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

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Datasheet Details

Part number 13007DL
Manufacturer Jingdao
File Size 115.78 KB
Description Bipolar Junction Transistor
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Full PDF Text Transcription

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.
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