Datasheet4U Logo Datasheet4U.com

13007S - Bipolar Junction Transistor

Datasheet Summary

Features

  • Features of good high temperature High switching speed 3．.

📥 Download Datasheet

Datasheet preview – 13007S

Datasheet Details

Part number 13007S
Manufacturer Jingdao
File Size 119.16 KB
Description Bipolar Junction Transistor
Datasheet download datasheet 13007S Datasheet
Additional preview pages of the 13007S datasheet.

📁 Similar Datasheet

  • 13007 - NPN Silicon Transistor (Trea Sure Star)
  • 13007 - NPN Transistor (Micro Electronics)
  • 13007 - NPN Transistor (Jiangsu Changjiang)
  • 13007 - NPN Epitaxial Silicon Transistor (Elite)
  • 13007A - MJE13007A (Mospec Semiconductor)
  • 13007B - TS13007B (TSC)
  • 13007N - ST13007N (STMicroelectronics)
  • 1300 - Crystal Clock Oscillators (Nihon Dempa Kogyo)
  • 1300-102-4xx - 2.54mm IDC Connector (Methode Electronics)
  • 13001 - NPN Epitaxial Silicon Transistor (Elite)
Other Datasheets by Jingdao
  • 13007DL - Bipolar Junction Transistor
  • 13007T - Bipolar Junction Transistor
  • 13001-2 - NPN power transistor
  • 13001-A - NPN power transistor
  • 13003AD - Bipolar Junction Transistor
  • 13005D - NPN power transistor
  • 13005DL - NPN power transistor
  • 13009 - PNP power transistor

Full PDF Text Transcription

Click to expand full text
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007S Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer Switch Power Supply and All kinds of power switch circuit 2．FEATURES Features of good high temperature High switching speed 3．PACKAGE TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.
Published: |